Advanced high voltage power device concepts / B. Jayant Baliga.
Material type: TextPublisher: [New York (State)] : Springer, [2011]Copyright date: ©2011Description: xvi, 568 pages : illustrations ; 24 cmContent type:- text
- unmediated
- volume
- 1461402689
- 9781461402688
- 621.3815287 23
- TK7872.R35 B35 2011
Item type | Current library | Call number | Copy number | Status | Date due | Barcode | |
---|---|---|---|---|---|---|---|
Book | City Campus City Campus Main Collection | 621.3815287 BAL (Browse shelf(Opens below)) | 1 | Available | A507408B |
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621.3815 VOR Fast analytical techniques for electrical and electronic circuits / | 621.38152 AND Fundamentals of semiconductor devices / | 621.38152 MUL Device electronics for integrated circuits / | 621.3815287 BAL Advanced high voltage power device concepts / | 621.381531 MAR Printed circuit assembly design / | 621.381531 MIT Complete PCB design using OrCad capture and layout / | 621.3815322 CON Control of power electronic converters and systems / |
Includes bibliographical references and index.
1. Introduction -- 2. Silicon Thyristors -- 3. Silicon Carbide Thyristors -- 4. Silicon GTO -- 5. Silicon IGBT (Insulated Gate Bipolar Transistor) -- 6. Si C Planar MOSFET Structures -- 7. Silicon Carbide IGBT -- 8. Silicon MCT -- 9. Silicon BRT -- 10. Silicon EST -- 11. Synopsis -- --
1.1. Typical Power Switching Waveforms -- 1.2. Typical High Voltage Power Device Structures -- 1.3. Revised Breakdown Models for Silicon -- 1.4. Typical High Voltage Applications -- 1.4.1. Variable-Frequency Motor Drive -- 1.4.2. High Voltage Direct Current (HVDC) Power Transmission and Distribution -- 1.5. Conclusions -- 2.1. Power Thyristor Structure and Operation -- 2.2. 5,000-V Silicon Thyristor -- 2.2.1. Blocking Characteristics -- 2.2.2. On-State Characteristics -- 2.2.3. Turn-On -- 2.2.4. Reverse Recovery -- 2.2.5. Summary -- 2.3. 10,000-V Silicon Thyristor -- 2.3.1. Blocking Characteristics -- 2.3.2. On-State Characteristics -- 2.3.3. Turn-On -- 2.3.4. Reverse Recovery -- 2.3.5. Summary -- 2.4. Conclusions -- 3.1. Si C Thyristor Structure -- 3.2. 20-k V Silicon Baseline Thyristor -- 3.2.1. Blocking Characteristics -- 3.2.2. On-State Characteristics -- 3.3. 20-k V Silicon Carbide Thyristor -- 3.3.1. Blocking Characteristics -- 3.3.2. On-State Characteristics -- 3.4. Conclusions -- 4.1. Basic Structure and Operation -- 4.2. 5,000-V Silicon GTO -- 4.2.1. Blocking Characteristics -- 4.2.2. Leakage Current -- 4.2.3. On-State Voltage Drop -- 4.2.4. Turn-Off Characteristics -- 4.2.5. Lifetime Dependence -- 4.2.6. Switching Energy Loss -- 4.2.7. Maximum Operating Frequency -- 4.2.8. Turn-Off Gain -- 4.2.9. Buffer Layer Doping -- 4.2.10. Transparent Emitter Structure -- 4.3. 10,000-V Silicon GTO -- 4.3.1. Blocking Characteristics -- 4.3.2. On-State Voltage Drop -- 4.3.3. Turn-Off Characteristics -- 4.3.4. Switching Energy Loss -- 4.3.5. Maximum Operating Frequency -- 4.3.6. Turn-Off Gain -- 4.4. Reverse-Biased Safe Operating Area -- 4.5. Conclusions -- 5.1. Basic Structure and Operation -- 5.2. 5,000-V Silicon Trench-Gate IGBT -- 5.2.1. Blocking Characteristics -- 5.2.2. Leakage Current -- 5.2.3. On-State Voltage Drop -- 5.2.4. Turn-Off Characteristics -- 5.2.5. Lifetime Dependence -- 5.2.6. Switching Energy Loss -- 5.2.7. Maximum Operating Frequency -- 5.2.8. Buffer Layer Doping -- 5.2.9. Transparent Emitter Structure -- 5.3. 5,000-V Silicon Planar-Gate IGBT -- 5.3.1. Blocking Characteristics -- 5.3.2. On-State Voltage Drop -- 5.3.3. Turn-Off Characteristics -- 5.3.4. Lifetime Dependence -- 5.3.5. Switching Energy Loss -- 5.3.6. Maximum Operating Frequency -- 5.4. 10,000-V Silicon IGBT -- 5.4.1. Blocking Characteristics -- 5.4.2. On-State Voltage Drop -- 5.4.3. Turn-Off Characteristics -- 5.4.4. Switching Energy Loss -- 5.4.5. Maximum Operating Frequency -- 5.5. Forward Biased Safe Operation Area -- 5.6. Reverse Biased Safe Operation Area -- 5.7. Conclusions -- 6.1. Shielded Planar Inversion-Mode MOSFET Structure -- 6.2. Blocking Mode -- 6.3. Threshold Voltage -- 6.4. On-State Resistance -- 6.4.1. Channel-Resistance -- 6.4.2. Accumulation-Resistance -- 6.4.3. JFET-Resistance -- 6.4.4. Drift-Resistance -- 6.4.5. Total On-Resistance -- 6.5. Capacitances -- 6.6. Inductive Load Turn-Off Characteristics -- 6.7. 5-k V Inversion-Mode MOSFET -- 6.7.1. Blocking Characteristics -- 6.7.2. On-Resistance -- 6.7.3. Device Capacitances -- 6.7.4. Inductive Load Turn-Off Characteristics -- 6.7.5. Switching Energy Loss -- 6.7.6. Maximum Operating Frequency -- 6.8. 10-k V Inversion-Mode MOSFET -- 6.8.1. Blocking Characteristics -- 6.8.2. On-Resistance -- 6.8.3. Inductive Load Turn-Off Characteristics -- 6.8.4. Switching Energy Loss -- 6.8.5. Maximum Operating Frequency -- 6.9. 20-k V Inversion-Mode MOSFET -- 6.9.1. Blocking Characteristics -- 6.9.2. On-Resistance -- 6.9.3. Inductive Load Turn-Off Characteristics -- 6.9.4. Switching Energy Loss -- 6.9.5. Maximum Operating Frequency -- 6.10. Conclusions -- 7.1. n-Channel Asymmetric Structure -- 7.1.1. Blocking Characteristics -- 7.1.2. On-State Voltage Drop -- 7.1.3. Turn-Off Characteristics -- 7.1.4. Lifetime Dependence -- 7.1.5. Switching Energy Loss -- 7.1.6. Maximum Operating Frequency -- 7.2. Optimized n-Channel Asymmetric Structure -- 7.2.1. Structure Optimization -- 7.2.2. Blocking Characteristics -- 7.2.3. On-State Voltage Drop -- 7.2.4. Turn-Off Characteristics -- 7.2.5. Lifetime Dependence -- 7.2.6. Switching Energy Loss -- 7.2.7. Maximum Operating Frequency -- 7.3. p-Channel Asymmetric Structure -- 7.3.1. Blocking Characteristics -- 7.3.2. On-State Voltage Drop -- 7.3.3. Turn-Off Characteristics -- 7.3.4. Lifetime Dependence -- 7.3.5. Switching Energy Loss -- 7.3.6. Maximum Operating Frequency -- 7.4. Conclusions -- 8.1. Basic Structure and Operation -- 8.2. 5,000-V Silicon MCT -- 8.2.1. Blocking Characteristics -- 8.2.2. On-State Voltage Drop -- 8.2.3. Turn-Off Characteristics -- 8.2.4. Lifetime Dependence -- 8.2.5. Switching Energy Loss -- 8.2.6. Maximum Operating Frequency -- 8.3. 10,000-V Silicon MCT -- 8.3.1. Blocking Characteristics -- 8.3.2. On-State Voltage Drop -- 8.3.3. Turn-Off Characteristics -- 8.3.4. Switching Energy Loss -- 8.3.5. Maximum Operating Frequency -- 8.4. Forward-Biased Safe Operating Area -- 8.5. Reverse-Biased Safe Operating Area -- 8.6. Conclusions -- 9.1. Basic Structure and Operation -- 9.2. 5,000-V Silicon BRT -- 9.2.1. Blocking Characteristics -- 9.2.2. On-State Voltage Drop -- 9.2.3. Turn-Off Characteristics -- 9.2.4. Lifetime Dependence -- 9.2.5. Switching Energy Loss -- 9.2.6. Maximum Operating Frequency -- 9.3. Alternate Structure and Operation -- 9.3.1. Blocking Characteristics -- 9.3.2. On-State Voltage Drop -- 9.3.3. Turn-Off Characteristics -- 9.4. 10,000-V Silicon BRT -- 9.4.1. Blocking Characteristics -- 9.4.2. On-State Voltage Drop -- 9.4.3. Turn-Off Characteristics -- 9.4.4. Switching Energy Loss -- 9.4.5. Maximum Operating Frequency -- 9.5. Forward-Biased Safe Operating Area -- 9.6. Reverse-Biased Safe Operating Area -- 9.7. Conclusions -- 10.1. Basic Structure and Operation -- 10.2. 5,000-V Silicon SC-EST -- 10.2.1. Blocking Characteristics -- 10.2.2. On-State Voltage Drop -- 10.2.3. Turn-Off Characteristics -- 10.2.4. Lifetime Dependence -- 10.2.5. Switching Energy Loss -- 10.2.6. Maximum Operating Frequency -- 10.2.7. Forward-Biased Safe Operating Area -- 10.3. 5,000-V Silicon DC-EST -- 10.3.1. Blocking Characteristics -- 10.3.2. On-State Voltage Drop -- 10.3.3. Turn-Off Characteristics -- 10.3.4. Lifetime Dependence -- 10.3.5. Switching Energy Loss -- 10.3.6. Maximum Operating Frequency -- 10.3.7. Forward-Biased Safe Operating Area -- 10.4. 10,000-V Silicon EST -- 10.4.1. Blocking Characteristics -- 10.4.2. On-State Voltage Drop -- 10.4.3. Turn-Off Characteristics -- 10.4.4. Switching Energy Loss -- 10.4.5. Maximum Operating Frequency -- 10.5. Reverse-Biased Safe Operation Area -- 10.6. Conclusions -- 11.1. 5-k V Devices -- 11.1.1. On-State Voltage Drop -- 11.1.2. Power-Loss Trade-off Curves -- 11.1.3. Forward-Biased Safe Operating Area -- 11.1.4. Reverse-Biased Safe Operating Area -- 11.2. 10-k V Devices -- 11.2.1. On-State Voltage Drop -- 11.2.2. Turn-Off Losses -- 11.2.3. Maximum Operating Frequency -- 11.3. Conclusions.
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