Advanced high voltage power device concepts / (Record no. 1233011)

MARC details
000 -LEADER
fixed length control field 09050cam a2200397 i 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20211104100222.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 120209s2011 nyua b 001 0 eng d
010 ## - LIBRARY OF CONGRESS CONTROL NUMBER
LC control number 2011932228
011 ## - LINKING LIBRARY OF CONGRESS CONTROL NUMBER [OBSOLETE]
Local cataloguing issues note Changed OCLC from 731920827 to 762058774
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 1461402689
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781461402688
035 ## - SYSTEM CONTROL NUMBER
System control number (ATU)b12348338
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC)762058774
040 ## - CATALOGING SOURCE
Original cataloging agency BTCTA
Language of cataloging eng
Description conventions rda
Transcribing agency BTCTA
Modifying agency YDXCP
-- BWX
-- IXA
-- ATU
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7872.R35
Item number B35 2011
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3815287
Edition number 23
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Baliga, B. Jayant,
Dates associated with a name 1948-
Relator term author.
9 (RLIN) 449818
245 10 - TITLE STATEMENT
Title Advanced high voltage power device concepts /
Statement of responsibility, etc. B. Jayant Baliga.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture [New York (State)] :
Name of producer, publisher, distributor, manufacturer Springer,
Date of production, publication, distribution, manufacture, or copyright notice [2011]
264 #4 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Date of production, publication, distribution, manufacture, or copyright notice ©2011
300 ## - PHYSICAL DESCRIPTION
Extent xvi, 568 pages :
Other physical details illustrations ;
Dimensions 24 cm
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term unmediated
Media type code n
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term volume
Carrier type code nc
Source rdacarrier
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note Includes bibliographical references and index.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note 1. Introduction -- 2. Silicon Thyristors -- 3. Silicon Carbide Thyristors -- 4. Silicon GTO -- 5. Silicon IGBT (Insulated Gate Bipolar Transistor) -- 6. Si C Planar MOSFET Structures -- 7. Silicon Carbide IGBT -- 8. Silicon MCT -- 9. Silicon BRT -- 10. Silicon EST -- 11. Synopsis -- --
505 00 - FORMATTED CONTENTS NOTE
Miscellaneous information 1.1.
Title Typical Power Switching Waveforms --
Miscellaneous information 1.2.
Title Typical High Voltage Power Device Structures --
Miscellaneous information 1.3.
Title Revised Breakdown Models for Silicon --
Miscellaneous information 1.4.
Title Typical High Voltage Applications --
Miscellaneous information 1.4.1.
Title Variable-Frequency Motor Drive --
Miscellaneous information 1.4.2.
Title High Voltage Direct Current (HVDC) Power Transmission and Distribution --
Miscellaneous information 1.5.
Title Conclusions --
Miscellaneous information 2.1.
Title Power Thyristor Structure and Operation --
Miscellaneous information 2.2.
Title 5,000-V Silicon Thyristor --
Miscellaneous information 2.2.1.
Title Blocking Characteristics --
Miscellaneous information 2.2.2.
Title On-State Characteristics --
Miscellaneous information 2.2.3.
Title Turn-On --
Miscellaneous information 2.2.4.
Title Reverse Recovery --
Miscellaneous information 2.2.5.
Title Summary --
Miscellaneous information 2.3.
Title 10,000-V Silicon Thyristor --
Miscellaneous information 2.3.1.
Title Blocking Characteristics --
Miscellaneous information 2.3.2.
Title On-State Characteristics --
Miscellaneous information 2.3.3.
Title Turn-On --
Miscellaneous information 2.3.4.
Title Reverse Recovery --
Miscellaneous information 2.3.5.
Title Summary --
Miscellaneous information 2.4.
Title Conclusions --
Miscellaneous information 3.1.
Title Si C Thyristor Structure --
Miscellaneous information 3.2.
Title 20-k V Silicon Baseline Thyristor --
Miscellaneous information 3.2.1.
Title Blocking Characteristics --
Miscellaneous information 3.2.2.
Title On-State Characteristics --
Miscellaneous information 3.3.
Title 20-k V Silicon Carbide Thyristor --
Miscellaneous information 3.3.1.
Title Blocking Characteristics --
Miscellaneous information 3.3.2.
Title On-State Characteristics --
Miscellaneous information 3.4.
Title Conclusions --
Miscellaneous information 4.1.
Title Basic Structure and Operation --
Miscellaneous information 4.2.
Title 5,000-V Silicon GTO --
Miscellaneous information 4.2.1.
Title Blocking Characteristics --
Miscellaneous information 4.2.2.
Title Leakage Current --
Miscellaneous information 4.2.3.
Title On-State Voltage Drop --
Miscellaneous information 4.2.4.
Title Turn-Off Characteristics --
Miscellaneous information 4.2.5.
Title Lifetime Dependence --
Miscellaneous information 4.2.6.
Title Switching Energy Loss --
Miscellaneous information 4.2.7.
Title Maximum Operating Frequency --
Miscellaneous information 4.2.8.
Title Turn-Off Gain --
Miscellaneous information 4.2.9.
Title Buffer Layer Doping --
Miscellaneous information 4.2.10.
Title Transparent Emitter Structure --
Miscellaneous information 4.3.
Title 10,000-V Silicon GTO --
Miscellaneous information 4.3.1.
Title Blocking Characteristics --
Miscellaneous information 4.3.2.
Title On-State Voltage Drop --
Miscellaneous information 4.3.3.
Title Turn-Off Characteristics --
Miscellaneous information 4.3.4.
Title Switching Energy Loss --
Miscellaneous information 4.3.5.
Title Maximum Operating Frequency --
Miscellaneous information 4.3.6.
Title Turn-Off Gain --
Miscellaneous information 4.4.
Title Reverse-Biased Safe Operating Area --
Miscellaneous information 4.5.
Title Conclusions --
Miscellaneous information 5.1.
Title Basic Structure and Operation --
Miscellaneous information 5.2.
Title 5,000-V Silicon Trench-Gate IGBT --
Miscellaneous information 5.2.1.
Title Blocking Characteristics --
Miscellaneous information 5.2.2.
Title Leakage Current --
Miscellaneous information 5.2.3.
Title On-State Voltage Drop --
Miscellaneous information 5.2.4.
Title Turn-Off Characteristics --
Miscellaneous information 5.2.5.
Title Lifetime Dependence --
Miscellaneous information 5.2.6.
Title Switching Energy Loss --
Miscellaneous information 5.2.7.
Title Maximum Operating Frequency --
Miscellaneous information 5.2.8.
Title Buffer Layer Doping --
Miscellaneous information 5.2.9.
Title Transparent Emitter Structure --
Miscellaneous information 5.3.
Title 5,000-V Silicon Planar-Gate IGBT --
Miscellaneous information 5.3.1.
Title Blocking Characteristics --
Miscellaneous information 5.3.2.
Title On-State Voltage Drop --
Miscellaneous information 5.3.3.
Title Turn-Off Characteristics --
Miscellaneous information 5.3.4.
Title Lifetime Dependence --
Miscellaneous information 5.3.5.
Title Switching Energy Loss --
Miscellaneous information 5.3.6.
Title Maximum Operating Frequency --
Miscellaneous information 5.4.
Title 10,000-V Silicon IGBT --
Miscellaneous information 5.4.1.
Title Blocking Characteristics --
Miscellaneous information 5.4.2.
Title On-State Voltage Drop --
Miscellaneous information 5.4.3.
Title Turn-Off Characteristics --
Miscellaneous information 5.4.4.
Title Switching Energy Loss --
Miscellaneous information 5.4.5.
Title Maximum Operating Frequency --
Miscellaneous information 5.5.
Title Forward Biased Safe Operation Area --
Miscellaneous information 5.6.
Title Reverse Biased Safe Operation Area --
Miscellaneous information 5.7.
Title Conclusions --
Miscellaneous information 6.1.
Title Shielded Planar Inversion-Mode MOSFET Structure --
Miscellaneous information 6.2.
Title Blocking Mode --
Miscellaneous information 6.3.
Title Threshold Voltage --
Miscellaneous information 6.4.
Title On-State Resistance --
Miscellaneous information 6.4.1.
Title Channel-Resistance --
Miscellaneous information 6.4.2.
Title Accumulation-Resistance --
Miscellaneous information 6.4.3.
Title JFET-Resistance --
Miscellaneous information 6.4.4.
Title Drift-Resistance --
Miscellaneous information 6.4.5.
Title Total On-Resistance --
Miscellaneous information 6.5.
Title Capacitances --
Miscellaneous information 6.6.
Title Inductive Load Turn-Off Characteristics --
Miscellaneous information 6.7.
Title 5-k V Inversion-Mode MOSFET --
Miscellaneous information 6.7.1.
Title Blocking Characteristics --
Miscellaneous information 6.7.2.
Title On-Resistance --
Miscellaneous information 6.7.3.
Title Device Capacitances --
Miscellaneous information 6.7.4.
Title Inductive Load Turn-Off Characteristics --
Miscellaneous information 6.7.5.
Title Switching Energy Loss --
Miscellaneous information 6.7.6.
Title Maximum Operating Frequency --
Miscellaneous information 6.8.
Title 10-k V Inversion-Mode MOSFET --
Miscellaneous information 6.8.1.
Title Blocking Characteristics --
Miscellaneous information 6.8.2.
Title On-Resistance --
Miscellaneous information 6.8.3.
Title Inductive Load Turn-Off Characteristics --
Miscellaneous information 6.8.4.
Title Switching Energy Loss --
Miscellaneous information 6.8.5.
Title Maximum Operating Frequency --
Miscellaneous information 6.9.
Title 20-k V Inversion-Mode MOSFET --
Miscellaneous information 6.9.1.
Title Blocking Characteristics --
Miscellaneous information 6.9.2.
Title On-Resistance --
Miscellaneous information 6.9.3.
Title Inductive Load Turn-Off Characteristics --
Miscellaneous information 6.9.4.
Title Switching Energy Loss --
Miscellaneous information 6.9.5.
Title Maximum Operating Frequency --
Miscellaneous information 6.10.
Title Conclusions --
Miscellaneous information 7.1.
Title n-Channel Asymmetric Structure --
Miscellaneous information 7.1.1.
Title Blocking Characteristics --
Miscellaneous information 7.1.2.
Title On-State Voltage Drop --
Miscellaneous information 7.1.3.
Title Turn-Off Characteristics --
Miscellaneous information 7.1.4.
Title Lifetime Dependence --
Miscellaneous information 7.1.5.
Title Switching Energy Loss --
Miscellaneous information 7.1.6.
Title Maximum Operating Frequency --
Miscellaneous information 7.2.
Title Optimized n-Channel Asymmetric Structure --
Miscellaneous information 7.2.1.
Title Structure Optimization --
Miscellaneous information 7.2.2.
Title Blocking Characteristics --
Miscellaneous information 7.2.3.
Title On-State Voltage Drop --
Miscellaneous information 7.2.4.
Title Turn-Off Characteristics --
Miscellaneous information 7.2.5.
Title Lifetime Dependence --
Miscellaneous information 7.2.6.
Title Switching Energy Loss --
Miscellaneous information 7.2.7.
Title Maximum Operating Frequency --
Miscellaneous information 7.3.
Title p-Channel Asymmetric Structure --
Miscellaneous information 7.3.1.
Title Blocking Characteristics --
Miscellaneous information 7.3.2.
Title On-State Voltage Drop --
Miscellaneous information 7.3.3.
Title Turn-Off Characteristics --
Miscellaneous information 7.3.4.
Title Lifetime Dependence --
Miscellaneous information 7.3.5.
Title Switching Energy Loss --
Miscellaneous information 7.3.6.
Title Maximum Operating Frequency --
Miscellaneous information 7.4.
Title Conclusions --
Miscellaneous information 8.1.
Title Basic Structure and Operation --
Miscellaneous information 8.2.
Title 5,000-V Silicon MCT --
Miscellaneous information 8.2.1.
Title Blocking Characteristics --
Miscellaneous information 8.2.2.
Title On-State Voltage Drop --
Miscellaneous information 8.2.3.
Title Turn-Off Characteristics --
Miscellaneous information 8.2.4.
Title Lifetime Dependence --
Miscellaneous information 8.2.5.
Title Switching Energy Loss --
Miscellaneous information 8.2.6.
Title Maximum Operating Frequency --
Miscellaneous information 8.3.
Title 10,000-V Silicon MCT --
Miscellaneous information 8.3.1.
Title Blocking Characteristics --
Miscellaneous information 8.3.2.
Title On-State Voltage Drop --
Miscellaneous information 8.3.3.
Title Turn-Off Characteristics --
Miscellaneous information 8.3.4.
Title Switching Energy Loss --
Miscellaneous information 8.3.5.
Title Maximum Operating Frequency --
Miscellaneous information 8.4.
Title Forward-Biased Safe Operating Area --
Miscellaneous information 8.5.
Title Reverse-Biased Safe Operating Area --
Miscellaneous information 8.6.
Title Conclusions --
Miscellaneous information 9.1.
Title Basic Structure and Operation --
Miscellaneous information 9.2.
Title 5,000-V Silicon BRT --
Miscellaneous information 9.2.1.
Title Blocking Characteristics --
Miscellaneous information 9.2.2.
Title On-State Voltage Drop --
Miscellaneous information 9.2.3.
Title Turn-Off Characteristics --
Miscellaneous information 9.2.4.
Title Lifetime Dependence --
Miscellaneous information 9.2.5.
Title Switching Energy Loss --
Miscellaneous information 9.2.6.
Title Maximum Operating Frequency --
Miscellaneous information 9.3.
Title Alternate Structure and Operation --
Miscellaneous information 9.3.1.
Title Blocking Characteristics --
Miscellaneous information 9.3.2.
Title On-State Voltage Drop --
Miscellaneous information 9.3.3.
Title Turn-Off Characteristics --
Miscellaneous information 9.4.
Title 10,000-V Silicon BRT --
Miscellaneous information 9.4.1.
Title Blocking Characteristics --
Miscellaneous information 9.4.2.
Title On-State Voltage Drop --
Miscellaneous information 9.4.3.
Title Turn-Off Characteristics --
Miscellaneous information 9.4.4.
Title Switching Energy Loss --
Miscellaneous information 9.4.5.
Title Maximum Operating Frequency --
Miscellaneous information 9.5.
Title Forward-Biased Safe Operating Area --
Miscellaneous information 9.6.
Title Reverse-Biased Safe Operating Area --
Miscellaneous information 9.7.
Title Conclusions --
Miscellaneous information 10.1.
Title Basic Structure and Operation --
Miscellaneous information 10.2.
Title 5,000-V Silicon SC-EST --
Miscellaneous information 10.2.1.
Title Blocking Characteristics --
Miscellaneous information 10.2.2.
Title On-State Voltage Drop --
Miscellaneous information 10.2.3.
Title Turn-Off Characteristics --
Miscellaneous information 10.2.4.
Title Lifetime Dependence --
Miscellaneous information 10.2.5.
Title Switching Energy Loss --
Miscellaneous information 10.2.6.
Title Maximum Operating Frequency --
Miscellaneous information 10.2.7.
Title Forward-Biased Safe Operating Area --
Miscellaneous information 10.3.
Title 5,000-V Silicon DC-EST --
Miscellaneous information 10.3.1.
Title Blocking Characteristics --
Miscellaneous information 10.3.2.
Title On-State Voltage Drop --
Miscellaneous information 10.3.3.
Title Turn-Off Characteristics --
Miscellaneous information 10.3.4.
Title Lifetime Dependence --
Miscellaneous information 10.3.5.
Title Switching Energy Loss --
Miscellaneous information 10.3.6.
Title Maximum Operating Frequency --
Miscellaneous information 10.3.7.
Title Forward-Biased Safe Operating Area --
Miscellaneous information 10.4.
Title 10,000-V Silicon EST --
Miscellaneous information 10.4.1.
Title Blocking Characteristics --
Miscellaneous information 10.4.2.
Title On-State Voltage Drop --
Miscellaneous information 10.4.3.
Title Turn-Off Characteristics --
Miscellaneous information 10.4.4.
Title Switching Energy Loss --
Miscellaneous information 10.4.5.
Title Maximum Operating Frequency --
Miscellaneous information 10.5.
Title Reverse-Biased Safe Operation Area --
Miscellaneous information 10.6.
Title Conclusions --
Miscellaneous information 11.1.
Title 5-k V Devices --
Miscellaneous information 11.1.1.
Title On-State Voltage Drop --
Miscellaneous information 11.1.2.
Title Power-Loss Trade-off Curves --
Miscellaneous information 11.1.3.
Title Forward-Biased Safe Operating Area --
Miscellaneous information 11.1.4.
Title Reverse-Biased Safe Operating Area --
Miscellaneous information 11.2.
Title 10-k V Devices --
Miscellaneous information 11.2.1.
Title On-State Voltage Drop --
Miscellaneous information 11.2.2.
Title Turn-Off Losses --
Miscellaneous information 11.2.3.
Title Maximum Operating Frequency --
Miscellaneous information 11.3.
Title Conclusions.
588 ## - SOURCE OF DESCRIPTION NOTE
Source of description note Machine converted from AACR2 source record.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Silicon-controlled rectifiers.
9 (RLIN) 324035
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Solid state electronics.
9 (RLIN) 324281
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Power semiconductors.
9 (RLIN) 322646
907 ## - LOCAL DATA ELEMENT G, LDG (RLIN)
a .b12348338
b 06-09-21
c 28-10-15
998 ## - LOCAL CONTROL INFORMATION (RLIN)
-- b
-- c
Operator's initials, OID (RLIN) 06-04-16
Cataloger's initials, CIN (RLIN) m
First date, FD (RLIN) a
-- eng
-- nyu
-- 0
945 ## - LOCAL PROCESSING INFORMATION (OCLC)
a 621.3815287 BAL
g 1
i A507408B
j 0
l cmain
o -
p $233.16
q -
r -
s -
t 0
u 2
v 0
w 0
x 1
y .i13216776
z 29-10-15
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Book
Holdings
Withdrawn status Lost status Damaged status Not for loan Home library Current library Shelving location Date acquired Cost, normal purchase price Inventory number Total Checkouts Total Renewals Full call number Barcode Date last seen Date last checked out Copy number Cost, replacement price Price effective from Koha item type
        City Campus City Campus City Campus Main Collection 29/10/2015 233.16 i13216776 2   621.3815287 BAL A507408B 06/09/2017 25/08/2017 1 233.16 31/10/2021 Book

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