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Device electronics for integrated circuits / Richard S. Muller, Theodore I. Kamins, with Mansun Chan.

By: Contributor(s): Material type: TextTextPublisher: New York, NY : John Wiley & Sons, Inc., [2003]Copyright date: ©2003Edition: Third editionDescription: xviii, 528 pages : illustrations ; 26 cmContent type:
  • text
Media type:
  • unmediated
Carrier type:
  • volume
ISBN:
  • 0471593982
  • 9780471593980
Subject(s): DDC classification:
  • 621.38152
LOC classification:
  • TK7871.85. M825 2003
Contents:
1. Semiconductor Electronics. 1.1. Physics of Semiconductor Materials. 1.2. Free Carriers in Semiconductors. 1.3. Device: Hall-Effect Magnetic Sensor -- 2. Silicon Technology. 2.1. The Silicon Planar Process. 2.2. Crystal Growth. 2.3. Thermal Oxidation. 2.4. Lithography and Pattern Transfer. 2.5. Dopant Addition and Diffusion. 2.6. Chemical Vapor Deposition. 2.7. Interconnection and Packaging. 2.8. Compound-Semiconductor Processing. 2.9. Numerical Simulation. 2.10. Device: Integrated-Circuit Resistor -- 3. Metal-Semiconductor Contacts. 3.1. Equilibrium in Electronic Systems. 3.2. Idealized Metal-Semiconductor Junctions. 3.3. Current-Voltage Characteristics. 3.4. Nonrectifying (Ohmic) Contacts. 3.5. Surface Effects. 3.6. Metal-Semiconductor Devices: Schottky Diodes -- 4. pn Junctions. 4.1. Graded Impurity Distributions. 4.2. The pn Junction. 4.3. Reverse-Biased pn Junctions. 4.4. Junction Breakdown. 4.5. Device: Junction Field-Effect Transistors -- 5. Currents in pn Junctions. 5.1. Continuity Equation. 5.2. Generation and Recombination. 5.3. Current-Voltage Characteristics of pn Junctions. 5.4. Charge Storage and Diode Transients. 5.5. Device Modeling and Simulation. 5.6. Devices -- 6. Bipolar Transistors I: Basic Properties. 6.1. Transistor Action. 6.2. Active Bias. 6.3. Transistor Switching. 6.4. Ebers-Moll Model. 6.5. Devices: Planar Bipolar Amplifying and Switching Transistors. 6.6. Devices: Heterojunction Bipolar Transistors -- 7. Bipolar Transistors II: Limitations and Models. 7.1. Effects of Collector Bias Variation (Early Effect). 7.2. Effects at Low and High Emitter Bias. 7.3. Base Transit Time. 7.4. Charge-Control Model. 7.5. Small-Signal Transistor Model. 7.6. Frequency Limits of Bipolar Transistors. 7.7. Bipolar Transistor Model for Computer Simulation. 7.8. Devices: pnp Transistors -- 8. Properties of the Metal-Oxide-Silicon System. 8.1. The Ideal MOS Structure. 8.2. Analysis of the Ideal MOS Structure. 8.3. MOS Electronics. 8.4. Capacitance of the MOS System. 8.5. Non-Ideal MOS System. 8.6. Surface Effects on pn Junctions. 8.7. MOS Capacitors and Charge-Coupled Devices -- 9. MOS Field-Effect Transistors I: Physical Effects and Models. 9.1. Basic MOSFET Behavior. 9.2. Improved Models for Short-Channel MOSFETs. 9.3. Devices: Complementary MOSFETs - CMOS. 9.4. Looking Ahead -- 10. MOS Field-Effect Transistors II: High-Field Effects. 10.1. Electric Fields in the Velocity-Saturation Region. 10.2. Substrate Current. 10.3. Gate Current. 10.4. Device Degradation. 10.5. Devices: MOS Nonvolatile Memory Structures.
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Holdings
Item type Current library Call number Copy number Status Date due Barcode
Book City Campus City Campus Main Collection 621.38152 MUL (Browse shelf(Opens below)) 1 Available A410731B

Includes bibliographical references and index.

1. Semiconductor Electronics. 1.1. Physics of Semiconductor Materials. 1.2. Free Carriers in Semiconductors. 1.3. Device: Hall-Effect Magnetic Sensor -- 2. Silicon Technology. 2.1. The Silicon Planar Process. 2.2. Crystal Growth. 2.3. Thermal Oxidation. 2.4. Lithography and Pattern Transfer. 2.5. Dopant Addition and Diffusion. 2.6. Chemical Vapor Deposition. 2.7. Interconnection and Packaging. 2.8. Compound-Semiconductor Processing. 2.9. Numerical Simulation. 2.10. Device: Integrated-Circuit Resistor -- 3. Metal-Semiconductor Contacts. 3.1. Equilibrium in Electronic Systems. 3.2. Idealized Metal-Semiconductor Junctions. 3.3. Current-Voltage Characteristics. 3.4. Nonrectifying (Ohmic) Contacts. 3.5. Surface Effects. 3.6. Metal-Semiconductor Devices: Schottky Diodes -- 4. pn Junctions. 4.1. Graded Impurity Distributions. 4.2. The pn Junction. 4.3. Reverse-Biased pn Junctions. 4.4. Junction Breakdown. 4.5. Device: Junction Field-Effect Transistors -- 5. Currents in pn Junctions. 5.1. Continuity Equation. 5.2. Generation and Recombination. 5.3. Current-Voltage Characteristics of pn Junctions. 5.4. Charge Storage and Diode Transients. 5.5. Device Modeling and Simulation. 5.6. Devices -- 6. Bipolar Transistors I: Basic Properties. 6.1. Transistor Action. 6.2. Active Bias. 6.3. Transistor Switching. 6.4. Ebers-Moll Model. 6.5. Devices: Planar Bipolar Amplifying and Switching Transistors. 6.6. Devices: Heterojunction Bipolar Transistors -- 7. Bipolar Transistors II: Limitations and Models. 7.1. Effects of Collector Bias Variation (Early Effect). 7.2. Effects at Low and High Emitter Bias. 7.3. Base Transit Time. 7.4. Charge-Control Model. 7.5. Small-Signal Transistor Model. 7.6. Frequency Limits of Bipolar Transistors. 7.7. Bipolar Transistor Model for Computer Simulation. 7.8. Devices: pnp Transistors -- 8. Properties of the Metal-Oxide-Silicon System. 8.1. The Ideal MOS Structure. 8.2. Analysis of the Ideal MOS Structure. 8.3. MOS Electronics. 8.4. Capacitance of the MOS System. 8.5. Non-Ideal MOS System. 8.6. Surface Effects on pn Junctions. 8.7. MOS Capacitors and Charge-Coupled Devices -- 9. MOS Field-Effect Transistors I: Physical Effects and Models. 9.1. Basic MOSFET Behavior. 9.2. Improved Models for Short-Channel MOSFETs. 9.3. Devices: Complementary MOSFETs - CMOS. 9.4. Looking Ahead -- 10. MOS Field-Effect Transistors II: High-Field Effects. 10.1. Electric Fields in the Velocity-Saturation Region. 10.2. Substrate Current. 10.3. Gate Current. 10.4. Device Degradation. 10.5. Devices: MOS Nonvolatile Memory Structures.

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