Device electronics for integrated circuits /
Muller, Richard S.,
Device electronics for integrated circuits / Richard S. Muller, Theodore I. Kamins, with Mansun Chan. - Third edition. - xviii, 528 pages : illustrations ; 26 cm
Includes bibliographical references and index.
Semiconductor Electronics. Physics of Semiconductor Materials. Free Carriers in Semiconductors. Device: Hall-Effect Magnetic Sensor -- Silicon Technology. The Silicon Planar Process. Crystal Growth. Thermal Oxidation. Lithography and Pattern Transfer. Dopant Addition and Diffusion. Chemical Vapor Deposition. Interconnection and Packaging. Compound-Semiconductor Processing. Numerical Simulation. Device: Integrated-Circuit Resistor -- Metal-Semiconductor Contacts. Equilibrium in Electronic Systems. Idealized Metal-Semiconductor Junctions. Current-Voltage Characteristics. Nonrectifying (Ohmic) Contacts. Surface Effects. Metal-Semiconductor Devices: Schottky Diodes -- pn Junctions. Graded Impurity Distributions. The pn Junction. Reverse-Biased pn Junctions. Junction Breakdown. Device: Junction Field-Effect Transistors -- Currents in pn Junctions. Continuity Equation. Generation and Recombination. Current-Voltage Characteristics of pn Junctions. Charge Storage and Diode Transients. Device Modeling and Simulation. Devices -- Bipolar Transistors I: Basic Properties. Transistor Action. Active Bias. Transistor Switching. Ebers-Moll Model. Devices: Planar Bipolar Amplifying and Switching Transistors. Devices: Heterojunction Bipolar Transistors -- Bipolar Transistors II: Limitations and Models. Effects of Collector Bias Variation (Early Effect). Effects at Low and High Emitter Bias. Base Transit Time. Charge-Control Model. Small-Signal Transistor Model. Frequency Limits of Bipolar Transistors. Bipolar Transistor Model for Computer Simulation. Devices: pnp Transistors -- Properties of the Metal-Oxide-Silicon System. The Ideal MOS Structure. Analysis of the Ideal MOS Structure. MOS Electronics. Capacitance of the MOS System. Non-Ideal MOS System. Surface Effects on pn Junctions. MOS Capacitors and Charge-Coupled Devices -- MOS Field-Effect Transistors I: Physical Effects and Models. Basic MOSFET Behavior. Improved Models for Short-Channel MOSFETs. Devices: Complementary MOSFETs - CMOS. Looking Ahead -- MOS Field-Effect Transistors II: High-Field Effects. Electric Fields in the Velocity-Saturation Region. Substrate Current. Gate Current. Device Degradation. Devices: MOS Nonvolatile Memory Structures. 1. 1.1. 1.2. 1.3. 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7. 2.8. 2.9. 2.10. 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 4. 4.1. 4.2. 4.3. 4.4. 4.5. 5. 5.1. 5.2. 5.3. 5.4. 5.5. 5.6. 6. 6.1. 6.2. 6.3. 6.4. 6.5. 6.6. 7. 7.1. 7.2. 7.3. 7.4. 7.5. 7.6. 7.7. 7.8. 8. 8.1. 8.2. 8.3. 8.4. 8.5. 8.6. 8.7. 9. 9.1. 9.2. 9.3. 9.4. 10. 10.1. 10.2. 10.3. 10.4. 10.5.
0471593982 9780471593980
2002026742
Semiconductors.
Integrated circuits
TK7871.85. / M825 2003
621.38152
Device electronics for integrated circuits / Richard S. Muller, Theodore I. Kamins, with Mansun Chan. - Third edition. - xviii, 528 pages : illustrations ; 26 cm
Includes bibliographical references and index.
Semiconductor Electronics. Physics of Semiconductor Materials. Free Carriers in Semiconductors. Device: Hall-Effect Magnetic Sensor -- Silicon Technology. The Silicon Planar Process. Crystal Growth. Thermal Oxidation. Lithography and Pattern Transfer. Dopant Addition and Diffusion. Chemical Vapor Deposition. Interconnection and Packaging. Compound-Semiconductor Processing. Numerical Simulation. Device: Integrated-Circuit Resistor -- Metal-Semiconductor Contacts. Equilibrium in Electronic Systems. Idealized Metal-Semiconductor Junctions. Current-Voltage Characteristics. Nonrectifying (Ohmic) Contacts. Surface Effects. Metal-Semiconductor Devices: Schottky Diodes -- pn Junctions. Graded Impurity Distributions. The pn Junction. Reverse-Biased pn Junctions. Junction Breakdown. Device: Junction Field-Effect Transistors -- Currents in pn Junctions. Continuity Equation. Generation and Recombination. Current-Voltage Characteristics of pn Junctions. Charge Storage and Diode Transients. Device Modeling and Simulation. Devices -- Bipolar Transistors I: Basic Properties. Transistor Action. Active Bias. Transistor Switching. Ebers-Moll Model. Devices: Planar Bipolar Amplifying and Switching Transistors. Devices: Heterojunction Bipolar Transistors -- Bipolar Transistors II: Limitations and Models. Effects of Collector Bias Variation (Early Effect). Effects at Low and High Emitter Bias. Base Transit Time. Charge-Control Model. Small-Signal Transistor Model. Frequency Limits of Bipolar Transistors. Bipolar Transistor Model for Computer Simulation. Devices: pnp Transistors -- Properties of the Metal-Oxide-Silicon System. The Ideal MOS Structure. Analysis of the Ideal MOS Structure. MOS Electronics. Capacitance of the MOS System. Non-Ideal MOS System. Surface Effects on pn Junctions. MOS Capacitors and Charge-Coupled Devices -- MOS Field-Effect Transistors I: Physical Effects and Models. Basic MOSFET Behavior. Improved Models for Short-Channel MOSFETs. Devices: Complementary MOSFETs - CMOS. Looking Ahead -- MOS Field-Effect Transistors II: High-Field Effects. Electric Fields in the Velocity-Saturation Region. Substrate Current. Gate Current. Device Degradation. Devices: MOS Nonvolatile Memory Structures. 1. 1.1. 1.2. 1.3. 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7. 2.8. 2.9. 2.10. 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 4. 4.1. 4.2. 4.3. 4.4. 4.5. 5. 5.1. 5.2. 5.3. 5.4. 5.5. 5.6. 6. 6.1. 6.2. 6.3. 6.4. 6.5. 6.6. 7. 7.1. 7.2. 7.3. 7.4. 7.5. 7.6. 7.7. 7.8. 8. 8.1. 8.2. 8.3. 8.4. 8.5. 8.6. 8.7. 9. 9.1. 9.2. 9.3. 9.4. 10. 10.1. 10.2. 10.3. 10.4. 10.5.
0471593982 9780471593980
2002026742
Semiconductors.
Integrated circuits
TK7871.85. / M825 2003
621.38152