000 09050cam a2200397 i 4500
005 20211104100222.0
008 120209s2011 nyua b 001 0 eng d
010 _a 2011932228
011 _aChanged OCLC from 731920827 to 762058774
020 _a1461402689
020 _a9781461402688
035 _a(ATU)b12348338
035 _a(OCoLC)762058774
040 _aBTCTA
_beng
_erda
_cBTCTA
_dYDXCP
_dBWX
_dIXA
_dATU
050 4 _aTK7872.R35
_bB35 2011
082 0 4 _a621.3815287
_223
100 1 _aBaliga, B. Jayant,
_d1948-
_eauthor.
_9449818
245 1 0 _aAdvanced high voltage power device concepts /
_cB. Jayant Baliga.
264 1 _a[New York (State)] :
_bSpringer,
_c[2011]
264 4 _c©2011
300 _axvi, 568 pages :
_billustrations ;
_c24 cm
336 _atext
_btxt
_2rdacontent
337 _aunmediated
_bn
_2rdamedia
338 _avolume
_bnc
_2rdacarrier
504 _aIncludes bibliographical references and index.
505 0 _a1. Introduction -- 2. Silicon Thyristors -- 3. Silicon Carbide Thyristors -- 4. Silicon GTO -- 5. Silicon IGBT (Insulated Gate Bipolar Transistor) -- 6. Si C Planar MOSFET Structures -- 7. Silicon Carbide IGBT -- 8. Silicon MCT -- 9. Silicon BRT -- 10. Silicon EST -- 11. Synopsis -- --
505 0 0 _g1.1.
_tTypical Power Switching Waveforms --
_g1.2.
_tTypical High Voltage Power Device Structures --
_g1.3.
_tRevised Breakdown Models for Silicon --
_g1.4.
_tTypical High Voltage Applications --
_g1.4.1.
_tVariable-Frequency Motor Drive --
_g1.4.2.
_tHigh Voltage Direct Current (HVDC) Power Transmission and Distribution --
_g1.5.
_tConclusions --
_g2.1.
_tPower Thyristor Structure and Operation --
_g2.2.
_t5,000-V Silicon Thyristor --
_g2.2.1.
_tBlocking Characteristics --
_g2.2.2.
_tOn-State Characteristics --
_g2.2.3.
_tTurn-On --
_g2.2.4.
_tReverse Recovery --
_g2.2.5.
_tSummary --
_g2.3.
_t10,000-V Silicon Thyristor --
_g2.3.1.
_tBlocking Characteristics --
_g2.3.2.
_tOn-State Characteristics --
_g2.3.3.
_tTurn-On --
_g2.3.4.
_tReverse Recovery --
_g2.3.5.
_tSummary --
_g2.4.
_tConclusions --
_g3.1.
_tSi C Thyristor Structure --
_g3.2.
_t20-k V Silicon Baseline Thyristor --
_g3.2.1.
_tBlocking Characteristics --
_g3.2.2.
_tOn-State Characteristics --
_g3.3.
_t20-k V Silicon Carbide Thyristor --
_g3.3.1.
_tBlocking Characteristics --
_g3.3.2.
_tOn-State Characteristics --
_g3.4.
_tConclusions --
_g4.1.
_tBasic Structure and Operation --
_g4.2.
_t5,000-V Silicon GTO --
_g4.2.1.
_tBlocking Characteristics --
_g4.2.2.
_tLeakage Current --
_g4.2.3.
_tOn-State Voltage Drop --
_g4.2.4.
_tTurn-Off Characteristics --
_g4.2.5.
_tLifetime Dependence --
_g4.2.6.
_tSwitching Energy Loss --
_g4.2.7.
_tMaximum Operating Frequency --
_g4.2.8.
_tTurn-Off Gain --
_g4.2.9.
_tBuffer Layer Doping --
_g4.2.10.
_tTransparent Emitter Structure --
_g4.3.
_t10,000-V Silicon GTO --
_g4.3.1.
_tBlocking Characteristics --
_g4.3.2.
_tOn-State Voltage Drop --
_g4.3.3.
_tTurn-Off Characteristics --
_g4.3.4.
_tSwitching Energy Loss --
_g4.3.5.
_tMaximum Operating Frequency --
_g4.3.6.
_tTurn-Off Gain --
_g4.4.
_tReverse-Biased Safe Operating Area --
_g4.5.
_tConclusions --
_g5.1.
_tBasic Structure and Operation --
_g5.2.
_t5,000-V Silicon Trench-Gate IGBT --
_g5.2.1.
_tBlocking Characteristics --
_g5.2.2.
_tLeakage Current --
_g5.2.3.
_tOn-State Voltage Drop --
_g5.2.4.
_tTurn-Off Characteristics --
_g5.2.5.
_tLifetime Dependence --
_g5.2.6.
_tSwitching Energy Loss --
_g5.2.7.
_tMaximum Operating Frequency --
_g5.2.8.
_tBuffer Layer Doping --
_g5.2.9.
_tTransparent Emitter Structure --
_g5.3.
_t5,000-V Silicon Planar-Gate IGBT --
_g5.3.1.
_tBlocking Characteristics --
_g5.3.2.
_tOn-State Voltage Drop --
_g5.3.3.
_tTurn-Off Characteristics --
_g5.3.4.
_tLifetime Dependence --
_g5.3.5.
_tSwitching Energy Loss --
_g5.3.6.
_tMaximum Operating Frequency --
_g5.4.
_t10,000-V Silicon IGBT --
_g5.4.1.
_tBlocking Characteristics --
_g5.4.2.
_tOn-State Voltage Drop --
_g5.4.3.
_tTurn-Off Characteristics --
_g5.4.4.
_tSwitching Energy Loss --
_g5.4.5.
_tMaximum Operating Frequency --
_g5.5.
_tForward Biased Safe Operation Area --
_g5.6.
_tReverse Biased Safe Operation Area --
_g5.7.
_tConclusions --
_g6.1.
_tShielded Planar Inversion-Mode MOSFET Structure --
_g6.2.
_tBlocking Mode --
_g6.3.
_tThreshold Voltage --
_g6.4.
_tOn-State Resistance --
_g6.4.1.
_tChannel-Resistance --
_g6.4.2.
_tAccumulation-Resistance --
_g6.4.3.
_tJFET-Resistance --
_g6.4.4.
_tDrift-Resistance --
_g6.4.5.
_tTotal On-Resistance --
_g6.5.
_tCapacitances --
_g6.6.
_tInductive Load Turn-Off Characteristics --
_g6.7.
_t5-k V Inversion-Mode MOSFET --
_g6.7.1.
_tBlocking Characteristics --
_g6.7.2.
_tOn-Resistance --
_g6.7.3.
_tDevice Capacitances --
_g6.7.4.
_tInductive Load Turn-Off Characteristics --
_g6.7.5.
_tSwitching Energy Loss --
_g6.7.6.
_tMaximum Operating Frequency --
_g6.8.
_t10-k V Inversion-Mode MOSFET --
_g6.8.1.
_tBlocking Characteristics --
_g6.8.2.
_tOn-Resistance --
_g6.8.3.
_tInductive Load Turn-Off Characteristics --
_g6.8.4.
_tSwitching Energy Loss --
_g6.8.5.
_tMaximum Operating Frequency --
_g6.9.
_t20-k V Inversion-Mode MOSFET --
_g6.9.1.
_tBlocking Characteristics --
_g6.9.2.
_tOn-Resistance --
_g6.9.3.
_tInductive Load Turn-Off Characteristics --
_g6.9.4.
_tSwitching Energy Loss --
_g6.9.5.
_tMaximum Operating Frequency --
_g6.10.
_tConclusions --
_g7.1.
_tn-Channel Asymmetric Structure --
_g7.1.1.
_tBlocking Characteristics --
_g7.1.2.
_tOn-State Voltage Drop --
_g7.1.3.
_tTurn-Off Characteristics --
_g7.1.4.
_tLifetime Dependence --
_g7.1.5.
_tSwitching Energy Loss --
_g7.1.6.
_tMaximum Operating Frequency --
_g7.2.
_tOptimized n-Channel Asymmetric Structure --
_g7.2.1.
_tStructure Optimization --
_g7.2.2.
_tBlocking Characteristics --
_g7.2.3.
_tOn-State Voltage Drop --
_g7.2.4.
_tTurn-Off Characteristics --
_g7.2.5.
_tLifetime Dependence --
_g7.2.6.
_tSwitching Energy Loss --
_g7.2.7.
_tMaximum Operating Frequency --
_g7.3.
_tp-Channel Asymmetric Structure --
_g7.3.1.
_tBlocking Characteristics --
_g7.3.2.
_tOn-State Voltage Drop --
_g7.3.3.
_tTurn-Off Characteristics --
_g7.3.4.
_tLifetime Dependence --
_g7.3.5.
_tSwitching Energy Loss --
_g7.3.6.
_tMaximum Operating Frequency --
_g7.4.
_tConclusions --
_g8.1.
_tBasic Structure and Operation --
_g8.2.
_t5,000-V Silicon MCT --
_g8.2.1.
_tBlocking Characteristics --
_g8.2.2.
_tOn-State Voltage Drop --
_g8.2.3.
_tTurn-Off Characteristics --
_g8.2.4.
_tLifetime Dependence --
_g8.2.5.
_tSwitching Energy Loss --
_g8.2.6.
_tMaximum Operating Frequency --
_g8.3.
_t10,000-V Silicon MCT --
_g8.3.1.
_tBlocking Characteristics --
_g8.3.2.
_tOn-State Voltage Drop --
_g8.3.3.
_tTurn-Off Characteristics --
_g8.3.4.
_tSwitching Energy Loss --
_g8.3.5.
_tMaximum Operating Frequency --
_g8.4.
_tForward-Biased Safe Operating Area --
_g8.5.
_tReverse-Biased Safe Operating Area --
_g8.6.
_tConclusions --
_g9.1.
_tBasic Structure and Operation --
_g9.2.
_t5,000-V Silicon BRT --
_g9.2.1.
_tBlocking Characteristics --
_g9.2.2.
_tOn-State Voltage Drop --
_g9.2.3.
_tTurn-Off Characteristics --
_g9.2.4.
_tLifetime Dependence --
_g9.2.5.
_tSwitching Energy Loss --
_g9.2.6.
_tMaximum Operating Frequency --
_g9.3.
_tAlternate Structure and Operation --
_g9.3.1.
_tBlocking Characteristics --
_g9.3.2.
_tOn-State Voltage Drop --
_g9.3.3.
_tTurn-Off Characteristics --
_g9.4.
_t10,000-V Silicon BRT --
_g9.4.1.
_tBlocking Characteristics --
_g9.4.2.
_tOn-State Voltage Drop --
_g9.4.3.
_tTurn-Off Characteristics --
_g9.4.4.
_tSwitching Energy Loss --
_g9.4.5.
_tMaximum Operating Frequency --
_g9.5.
_tForward-Biased Safe Operating Area --
_g9.6.
_tReverse-Biased Safe Operating Area --
_g9.7.
_tConclusions --
_g10.1.
_tBasic Structure and Operation --
_g10.2.
_t5,000-V Silicon SC-EST --
_g10.2.1.
_tBlocking Characteristics --
_g10.2.2.
_tOn-State Voltage Drop --
_g10.2.3.
_tTurn-Off Characteristics --
_g10.2.4.
_tLifetime Dependence --
_g10.2.5.
_tSwitching Energy Loss --
_g10.2.6.
_tMaximum Operating Frequency --
_g10.2.7.
_tForward-Biased Safe Operating Area --
_g10.3.
_t5,000-V Silicon DC-EST --
_g10.3.1.
_tBlocking Characteristics --
_g10.3.2.
_tOn-State Voltage Drop --
_g10.3.3.
_tTurn-Off Characteristics --
_g10.3.4.
_tLifetime Dependence --
_g10.3.5.
_tSwitching Energy Loss --
_g10.3.6.
_tMaximum Operating Frequency --
_g10.3.7.
_tForward-Biased Safe Operating Area --
_g10.4.
_t10,000-V Silicon EST --
_g10.4.1.
_tBlocking Characteristics --
_g10.4.2.
_tOn-State Voltage Drop --
_g10.4.3.
_tTurn-Off Characteristics --
_g10.4.4.
_tSwitching Energy Loss --
_g10.4.5.
_tMaximum Operating Frequency --
_g10.5.
_tReverse-Biased Safe Operation Area --
_g10.6.
_tConclusions --
_g11.1.
_t5-k V Devices --
_g11.1.1.
_tOn-State Voltage Drop --
_g11.1.2.
_tPower-Loss Trade-off Curves --
_g11.1.3.
_tForward-Biased Safe Operating Area --
_g11.1.4.
_tReverse-Biased Safe Operating Area --
_g11.2.
_t10-k V Devices --
_g11.2.1.
_tOn-State Voltage Drop --
_g11.2.2.
_tTurn-Off Losses --
_g11.2.3.
_tMaximum Operating Frequency --
_g11.3.
_tConclusions.
588 _aMachine converted from AACR2 source record.
650 0 _aSilicon-controlled rectifiers.
_9324035
650 0 _aSolid state electronics.
_9324281
650 0 _aPower semiconductors.
_9322646
907 _a.b12348338
_b06-09-21
_c28-10-15
998 _ab
_ac
_b06-04-16
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