000 | 09050cam a2200397 i 4500 | ||
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005 | 20211104100222.0 | ||
008 | 120209s2011 nyua b 001 0 eng d | ||
010 | _a 2011932228 | ||
011 | _aChanged OCLC from 731920827 to 762058774 | ||
020 | _a1461402689 | ||
020 | _a9781461402688 | ||
035 | _a(ATU)b12348338 | ||
035 | _a(OCoLC)762058774 | ||
040 |
_aBTCTA _beng _erda _cBTCTA _dYDXCP _dBWX _dIXA _dATU |
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050 | 4 |
_aTK7872.R35 _bB35 2011 |
|
082 | 0 | 4 |
_a621.3815287 _223 |
100 | 1 |
_aBaliga, B. Jayant, _d1948- _eauthor. _9449818 |
|
245 | 1 | 0 |
_aAdvanced high voltage power device concepts / _cB. Jayant Baliga. |
264 | 1 |
_a[New York (State)] : _bSpringer, _c[2011] |
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264 | 4 | _c©2011 | |
300 |
_axvi, 568 pages : _billustrations ; _c24 cm |
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336 |
_atext _btxt _2rdacontent |
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337 |
_aunmediated _bn _2rdamedia |
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338 |
_avolume _bnc _2rdacarrier |
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504 | _aIncludes bibliographical references and index. | ||
505 | 0 | _a1. Introduction -- 2. Silicon Thyristors -- 3. Silicon Carbide Thyristors -- 4. Silicon GTO -- 5. Silicon IGBT (Insulated Gate Bipolar Transistor) -- 6. Si C Planar MOSFET Structures -- 7. Silicon Carbide IGBT -- 8. Silicon MCT -- 9. Silicon BRT -- 10. Silicon EST -- 11. Synopsis -- -- | |
505 | 0 | 0 |
_g1.1. _tTypical Power Switching Waveforms -- _g1.2. _tTypical High Voltage Power Device Structures -- _g1.3. _tRevised Breakdown Models for Silicon -- _g1.4. _tTypical High Voltage Applications -- _g1.4.1. _tVariable-Frequency Motor Drive -- _g1.4.2. _tHigh Voltage Direct Current (HVDC) Power Transmission and Distribution -- _g1.5. _tConclusions -- _g2.1. _tPower Thyristor Structure and Operation -- _g2.2. _t5,000-V Silicon Thyristor -- _g2.2.1. _tBlocking Characteristics -- _g2.2.2. _tOn-State Characteristics -- _g2.2.3. _tTurn-On -- _g2.2.4. _tReverse Recovery -- _g2.2.5. _tSummary -- _g2.3. _t10,000-V Silicon Thyristor -- _g2.3.1. _tBlocking Characteristics -- _g2.3.2. _tOn-State Characteristics -- _g2.3.3. _tTurn-On -- _g2.3.4. _tReverse Recovery -- _g2.3.5. _tSummary -- _g2.4. _tConclusions -- _g3.1. _tSi C Thyristor Structure -- _g3.2. _t20-k V Silicon Baseline Thyristor -- _g3.2.1. _tBlocking Characteristics -- _g3.2.2. _tOn-State Characteristics -- _g3.3. _t20-k V Silicon Carbide Thyristor -- _g3.3.1. _tBlocking Characteristics -- _g3.3.2. _tOn-State Characteristics -- _g3.4. _tConclusions -- _g4.1. _tBasic Structure and Operation -- _g4.2. _t5,000-V Silicon GTO -- _g4.2.1. _tBlocking Characteristics -- _g4.2.2. _tLeakage Current -- _g4.2.3. _tOn-State Voltage Drop -- _g4.2.4. _tTurn-Off Characteristics -- _g4.2.5. _tLifetime Dependence -- _g4.2.6. _tSwitching Energy Loss -- _g4.2.7. _tMaximum Operating Frequency -- _g4.2.8. _tTurn-Off Gain -- _g4.2.9. _tBuffer Layer Doping -- _g4.2.10. _tTransparent Emitter Structure -- _g4.3. _t10,000-V Silicon GTO -- _g4.3.1. _tBlocking Characteristics -- _g4.3.2. _tOn-State Voltage Drop -- _g4.3.3. _tTurn-Off Characteristics -- _g4.3.4. _tSwitching Energy Loss -- _g4.3.5. _tMaximum Operating Frequency -- _g4.3.6. _tTurn-Off Gain -- _g4.4. _tReverse-Biased Safe Operating Area -- _g4.5. _tConclusions -- _g5.1. _tBasic Structure and Operation -- _g5.2. _t5,000-V Silicon Trench-Gate IGBT -- _g5.2.1. _tBlocking Characteristics -- _g5.2.2. _tLeakage Current -- _g5.2.3. _tOn-State Voltage Drop -- _g5.2.4. _tTurn-Off Characteristics -- _g5.2.5. _tLifetime Dependence -- _g5.2.6. _tSwitching Energy Loss -- _g5.2.7. _tMaximum Operating Frequency -- _g5.2.8. _tBuffer Layer Doping -- _g5.2.9. _tTransparent Emitter Structure -- _g5.3. _t5,000-V Silicon Planar-Gate IGBT -- _g5.3.1. _tBlocking Characteristics -- _g5.3.2. _tOn-State Voltage Drop -- _g5.3.3. _tTurn-Off Characteristics -- _g5.3.4. _tLifetime Dependence -- _g5.3.5. _tSwitching Energy Loss -- _g5.3.6. _tMaximum Operating Frequency -- _g5.4. _t10,000-V Silicon IGBT -- _g5.4.1. _tBlocking Characteristics -- _g5.4.2. _tOn-State Voltage Drop -- _g5.4.3. _tTurn-Off Characteristics -- _g5.4.4. _tSwitching Energy Loss -- _g5.4.5. _tMaximum Operating Frequency -- _g5.5. _tForward Biased Safe Operation Area -- _g5.6. _tReverse Biased Safe Operation Area -- _g5.7. _tConclusions -- _g6.1. _tShielded Planar Inversion-Mode MOSFET Structure -- _g6.2. _tBlocking Mode -- _g6.3. _tThreshold Voltage -- _g6.4. _tOn-State Resistance -- _g6.4.1. _tChannel-Resistance -- _g6.4.2. _tAccumulation-Resistance -- _g6.4.3. _tJFET-Resistance -- _g6.4.4. _tDrift-Resistance -- _g6.4.5. _tTotal On-Resistance -- _g6.5. _tCapacitances -- _g6.6. _tInductive Load Turn-Off Characteristics -- _g6.7. _t5-k V Inversion-Mode MOSFET -- _g6.7.1. _tBlocking Characteristics -- _g6.7.2. _tOn-Resistance -- _g6.7.3. _tDevice Capacitances -- _g6.7.4. _tInductive Load Turn-Off Characteristics -- _g6.7.5. _tSwitching Energy Loss -- _g6.7.6. _tMaximum Operating Frequency -- _g6.8. _t10-k V Inversion-Mode MOSFET -- _g6.8.1. _tBlocking Characteristics -- _g6.8.2. _tOn-Resistance -- _g6.8.3. _tInductive Load Turn-Off Characteristics -- _g6.8.4. _tSwitching Energy Loss -- _g6.8.5. _tMaximum Operating Frequency -- _g6.9. _t20-k V Inversion-Mode MOSFET -- _g6.9.1. _tBlocking Characteristics -- _g6.9.2. _tOn-Resistance -- _g6.9.3. _tInductive Load Turn-Off Characteristics -- _g6.9.4. _tSwitching Energy Loss -- _g6.9.5. _tMaximum Operating Frequency -- _g6.10. _tConclusions -- _g7.1. _tn-Channel Asymmetric Structure -- _g7.1.1. _tBlocking Characteristics -- _g7.1.2. _tOn-State Voltage Drop -- _g7.1.3. _tTurn-Off Characteristics -- _g7.1.4. _tLifetime Dependence -- _g7.1.5. _tSwitching Energy Loss -- _g7.1.6. _tMaximum Operating Frequency -- _g7.2. _tOptimized n-Channel Asymmetric Structure -- _g7.2.1. _tStructure Optimization -- _g7.2.2. _tBlocking Characteristics -- _g7.2.3. _tOn-State Voltage Drop -- _g7.2.4. _tTurn-Off Characteristics -- _g7.2.5. _tLifetime Dependence -- _g7.2.6. _tSwitching Energy Loss -- _g7.2.7. _tMaximum Operating Frequency -- _g7.3. _tp-Channel Asymmetric Structure -- _g7.3.1. _tBlocking Characteristics -- _g7.3.2. _tOn-State Voltage Drop -- _g7.3.3. _tTurn-Off Characteristics -- _g7.3.4. _tLifetime Dependence -- _g7.3.5. _tSwitching Energy Loss -- _g7.3.6. _tMaximum Operating Frequency -- _g7.4. _tConclusions -- _g8.1. _tBasic Structure and Operation -- _g8.2. _t5,000-V Silicon MCT -- _g8.2.1. _tBlocking Characteristics -- _g8.2.2. _tOn-State Voltage Drop -- _g8.2.3. _tTurn-Off Characteristics -- _g8.2.4. _tLifetime Dependence -- _g8.2.5. _tSwitching Energy Loss -- _g8.2.6. _tMaximum Operating Frequency -- _g8.3. _t10,000-V Silicon MCT -- _g8.3.1. _tBlocking Characteristics -- _g8.3.2. _tOn-State Voltage Drop -- _g8.3.3. _tTurn-Off Characteristics -- _g8.3.4. _tSwitching Energy Loss -- _g8.3.5. _tMaximum Operating Frequency -- _g8.4. _tForward-Biased Safe Operating Area -- _g8.5. _tReverse-Biased Safe Operating Area -- _g8.6. _tConclusions -- _g9.1. _tBasic Structure and Operation -- _g9.2. _t5,000-V Silicon BRT -- _g9.2.1. _tBlocking Characteristics -- _g9.2.2. _tOn-State Voltage Drop -- _g9.2.3. _tTurn-Off Characteristics -- _g9.2.4. _tLifetime Dependence -- _g9.2.5. _tSwitching Energy Loss -- _g9.2.6. _tMaximum Operating Frequency -- _g9.3. _tAlternate Structure and Operation -- _g9.3.1. _tBlocking Characteristics -- _g9.3.2. _tOn-State Voltage Drop -- _g9.3.3. _tTurn-Off Characteristics -- _g9.4. _t10,000-V Silicon BRT -- _g9.4.1. _tBlocking Characteristics -- _g9.4.2. _tOn-State Voltage Drop -- _g9.4.3. _tTurn-Off Characteristics -- _g9.4.4. _tSwitching Energy Loss -- _g9.4.5. _tMaximum Operating Frequency -- _g9.5. _tForward-Biased Safe Operating Area -- _g9.6. _tReverse-Biased Safe Operating Area -- _g9.7. _tConclusions -- _g10.1. _tBasic Structure and Operation -- _g10.2. _t5,000-V Silicon SC-EST -- _g10.2.1. _tBlocking Characteristics -- _g10.2.2. _tOn-State Voltage Drop -- _g10.2.3. _tTurn-Off Characteristics -- _g10.2.4. _tLifetime Dependence -- _g10.2.5. _tSwitching Energy Loss -- _g10.2.6. _tMaximum Operating Frequency -- _g10.2.7. _tForward-Biased Safe Operating Area -- _g10.3. _t5,000-V Silicon DC-EST -- _g10.3.1. _tBlocking Characteristics -- _g10.3.2. _tOn-State Voltage Drop -- _g10.3.3. _tTurn-Off Characteristics -- _g10.3.4. _tLifetime Dependence -- _g10.3.5. _tSwitching Energy Loss -- _g10.3.6. _tMaximum Operating Frequency -- _g10.3.7. _tForward-Biased Safe Operating Area -- _g10.4. _t10,000-V Silicon EST -- _g10.4.1. _tBlocking Characteristics -- _g10.4.2. _tOn-State Voltage Drop -- _g10.4.3. _tTurn-Off Characteristics -- _g10.4.4. _tSwitching Energy Loss -- _g10.4.5. _tMaximum Operating Frequency -- _g10.5. _tReverse-Biased Safe Operation Area -- _g10.6. _tConclusions -- _g11.1. _t5-k V Devices -- _g11.1.1. _tOn-State Voltage Drop -- _g11.1.2. _tPower-Loss Trade-off Curves -- _g11.1.3. _tForward-Biased Safe Operating Area -- _g11.1.4. _tReverse-Biased Safe Operating Area -- _g11.2. _t10-k V Devices -- _g11.2.1. _tOn-State Voltage Drop -- _g11.2.2. _tTurn-Off Losses -- _g11.2.3. _tMaximum Operating Frequency -- _g11.3. _tConclusions. |
588 | _aMachine converted from AACR2 source record. | ||
650 | 0 |
_aSilicon-controlled rectifiers. _9324035 |
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650 | 0 |
_aSolid state electronics. _9324281 |
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650 | 0 |
_aPower semiconductors. _9322646 |
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907 |
_a.b12348338 _b06-09-21 _c28-10-15 |
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