000 04223cam a22004214i 4500
005 20221101190302.0
008 020620s2003 nyua b 001 0 eng d
010 _a 2002026742
011 _aBIB MATCHES WORLDCAT
020 _a0471593982
_qcloth (alk. paper)
020 _a9780471593980
_qcloth (alk. paper)
035 _a(DLC) 2002026742
035 _a(OCoLC)50124428
040 _aDLC
_beng
_erda
_dATU
042 _apcc
050 0 0 _aTK7871.85.
_bM825 2003
082 0 _a621.38152
100 1 _aMuller, Richard S.,
_eauthor.
_91019132
245 1 0 _aDevice electronics for integrated circuits /
_cRichard S. Muller, Theodore I. Kamins, with Mansun Chan.
250 _aThird edition.
264 1 _aNew York, NY :
_bJohn Wiley & Sons, Inc.,
_c[2003]
264 4 _c©2003
300 _axviii, 528 pages :
_billustrations ;
_c26 cm
336 _atext
_btxt
_2rdacontent
337 _aunmediated
_bn
_2rdamedia
338 _avolume
_bnc
_2rdacarrier
504 _aIncludes bibliographical references and index.
505 0 0 _g1.
_tSemiconductor Electronics.
_g1.1.
_tPhysics of Semiconductor Materials.
_g1.2.
_tFree Carriers in Semiconductors.
_g1.3.
_tDevice: Hall-Effect Magnetic Sensor --
_g2.
_tSilicon Technology.
_g2.1.
_tThe Silicon Planar Process.
_g2.2.
_tCrystal Growth.
_g2.3.
_tThermal Oxidation.
_g2.4.
_tLithography and Pattern Transfer.
_g2.5.
_tDopant Addition and Diffusion.
_g2.6.
_tChemical Vapor Deposition.
_g2.7.
_tInterconnection and Packaging.
_g2.8.
_tCompound-Semiconductor Processing.
_g2.9.
_tNumerical Simulation.
_g2.10.
_tDevice: Integrated-Circuit Resistor --
_g3.
_tMetal-Semiconductor Contacts.
_g3.1.
_tEquilibrium in Electronic Systems.
_g3.2.
_tIdealized Metal-Semiconductor Junctions.
_g3.3.
_tCurrent-Voltage Characteristics.
_g3.4.
_tNonrectifying (Ohmic) Contacts.
_g3.5.
_tSurface Effects.
_g3.6.
_tMetal-Semiconductor Devices: Schottky Diodes --
_g4.
_tpn Junctions.
_g4.1.
_tGraded Impurity Distributions.
_g4.2.
_tThe pn Junction.
_g4.3.
_tReverse-Biased pn Junctions.
_g4.4.
_tJunction Breakdown.
_g4.5.
_tDevice: Junction Field-Effect Transistors --
_g5.
_tCurrents in pn Junctions.
_g5.1.
_tContinuity Equation.
_g5.2.
_tGeneration and Recombination.
_g5.3.
_tCurrent-Voltage Characteristics of pn Junctions.
_g5.4.
_tCharge Storage and Diode Transients.
_g5.5.
_tDevice Modeling and Simulation.
_g5.6.
_tDevices --
_g6.
_tBipolar Transistors I: Basic Properties.
_g6.1.
_tTransistor Action.
_g6.2.
_tActive Bias.
_g6.3.
_tTransistor Switching.
_g6.4.
_tEbers-Moll Model.
_g6.5.
_tDevices: Planar Bipolar Amplifying and Switching Transistors.
_g6.6.
_tDevices: Heterojunction Bipolar Transistors --
_g7.
_tBipolar Transistors II: Limitations and Models.
_g7.1.
_tEffects of Collector Bias Variation (Early Effect).
_g7.2.
_tEffects at Low and High Emitter Bias.
_g7.3.
_tBase Transit Time.
_g7.4.
_tCharge-Control Model.
_g7.5.
_tSmall-Signal Transistor Model.
_g7.6.
_tFrequency Limits of Bipolar Transistors.
_g7.7.
_tBipolar Transistor Model for Computer Simulation.
_g7.8.
_tDevices: pnp Transistors --
_g8.
_tProperties of the Metal-Oxide-Silicon System.
_g8.1.
_tThe Ideal MOS Structure.
_g8.2.
_tAnalysis of the Ideal MOS Structure.
_g8.3.
_tMOS Electronics.
_g8.4.
_tCapacitance of the MOS System.
_g8.5.
_tNon-Ideal MOS System.
_g8.6.
_tSurface Effects on pn Junctions.
_g8.7.
_tMOS Capacitors and Charge-Coupled Devices --
_g9.
_tMOS Field-Effect Transistors I: Physical Effects and Models.
_g9.1.
_tBasic MOSFET Behavior.
_g9.2.
_tImproved Models for Short-Channel MOSFETs.
_g9.3.
_tDevices: Complementary MOSFETs - CMOS.
_g9.4.
_tLooking Ahead --
_g10.
_tMOS Field-Effect Transistors II: High-Field Effects.
_g10.1.
_tElectric Fields in the Velocity-Saturation Region.
_g10.2.
_tSubstrate Current.
_g10.3.
_tGate Current.
_g10.4.
_tDevice Degradation.
_g10.5.
_tDevices: MOS Nonvolatile Memory Structures.
588 _aMachine converted from AACR2 source record.
650 0 _aSemiconductors.
_9323821
650 0 _aIntegrated circuits
_9319425
700 1 _aKamins, Theodore I.,
_eauthor.
_9235057
700 1 _aChan, Mansun,
_eauthor.
_91019134
907 _a.b10199500
_b03-10-17
_c27-10-15
942 _cB
945 _a621.38152 MUL
_g1
_iA410731B
_j0
_lcmain
_o-
_p$207.25
_q-
_r-
_s-
_t0
_u5
_v1
_w0
_x1
_y.i10479703
_z28-10-15
998 _a(2)b
_a(2)c
_b06-04-16
_cm
_da
_feng
_gnyu
_h0
999 _c1110511
_d1110511