000 | 04223cam a22004214i 4500 | ||
---|---|---|---|
005 | 20221101190302.0 | ||
008 | 020620s2003 nyua b 001 0 eng d | ||
010 | _a 2002026742 | ||
011 | _aBIB MATCHES WORLDCAT | ||
020 |
_a0471593982 _qcloth (alk. paper) |
||
020 |
_a9780471593980 _qcloth (alk. paper) |
||
035 | _a(DLC) 2002026742 | ||
035 | _a(OCoLC)50124428 | ||
040 |
_aDLC _beng _erda _dATU |
||
042 | _apcc | ||
050 | 0 | 0 |
_aTK7871.85. _bM825 2003 |
082 | 0 | _a621.38152 | |
100 | 1 |
_aMuller, Richard S., _eauthor. _91019132 |
|
245 | 1 | 0 |
_aDevice electronics for integrated circuits / _cRichard S. Muller, Theodore I. Kamins, with Mansun Chan. |
250 | _aThird edition. | ||
264 | 1 |
_aNew York, NY : _bJohn Wiley & Sons, Inc., _c[2003] |
|
264 | 4 | _c©2003 | |
300 |
_axviii, 528 pages : _billustrations ; _c26 cm |
||
336 |
_atext _btxt _2rdacontent |
||
337 |
_aunmediated _bn _2rdamedia |
||
338 |
_avolume _bnc _2rdacarrier |
||
504 | _aIncludes bibliographical references and index. | ||
505 | 0 | 0 |
_g1. _tSemiconductor Electronics. _g1.1. _tPhysics of Semiconductor Materials. _g1.2. _tFree Carriers in Semiconductors. _g1.3. _tDevice: Hall-Effect Magnetic Sensor -- _g2. _tSilicon Technology. _g2.1. _tThe Silicon Planar Process. _g2.2. _tCrystal Growth. _g2.3. _tThermal Oxidation. _g2.4. _tLithography and Pattern Transfer. _g2.5. _tDopant Addition and Diffusion. _g2.6. _tChemical Vapor Deposition. _g2.7. _tInterconnection and Packaging. _g2.8. _tCompound-Semiconductor Processing. _g2.9. _tNumerical Simulation. _g2.10. _tDevice: Integrated-Circuit Resistor -- _g3. _tMetal-Semiconductor Contacts. _g3.1. _tEquilibrium in Electronic Systems. _g3.2. _tIdealized Metal-Semiconductor Junctions. _g3.3. _tCurrent-Voltage Characteristics. _g3.4. _tNonrectifying (Ohmic) Contacts. _g3.5. _tSurface Effects. _g3.6. _tMetal-Semiconductor Devices: Schottky Diodes -- _g4. _tpn Junctions. _g4.1. _tGraded Impurity Distributions. _g4.2. _tThe pn Junction. _g4.3. _tReverse-Biased pn Junctions. _g4.4. _tJunction Breakdown. _g4.5. _tDevice: Junction Field-Effect Transistors -- _g5. _tCurrents in pn Junctions. _g5.1. _tContinuity Equation. _g5.2. _tGeneration and Recombination. _g5.3. _tCurrent-Voltage Characteristics of pn Junctions. _g5.4. _tCharge Storage and Diode Transients. _g5.5. _tDevice Modeling and Simulation. _g5.6. _tDevices -- _g6. _tBipolar Transistors I: Basic Properties. _g6.1. _tTransistor Action. _g6.2. _tActive Bias. _g6.3. _tTransistor Switching. _g6.4. _tEbers-Moll Model. _g6.5. _tDevices: Planar Bipolar Amplifying and Switching Transistors. _g6.6. _tDevices: Heterojunction Bipolar Transistors -- _g7. _tBipolar Transistors II: Limitations and Models. _g7.1. _tEffects of Collector Bias Variation (Early Effect). _g7.2. _tEffects at Low and High Emitter Bias. _g7.3. _tBase Transit Time. _g7.4. _tCharge-Control Model. _g7.5. _tSmall-Signal Transistor Model. _g7.6. _tFrequency Limits of Bipolar Transistors. _g7.7. _tBipolar Transistor Model for Computer Simulation. _g7.8. _tDevices: pnp Transistors -- _g8. _tProperties of the Metal-Oxide-Silicon System. _g8.1. _tThe Ideal MOS Structure. _g8.2. _tAnalysis of the Ideal MOS Structure. _g8.3. _tMOS Electronics. _g8.4. _tCapacitance of the MOS System. _g8.5. _tNon-Ideal MOS System. _g8.6. _tSurface Effects on pn Junctions. _g8.7. _tMOS Capacitors and Charge-Coupled Devices -- _g9. _tMOS Field-Effect Transistors I: Physical Effects and Models. _g9.1. _tBasic MOSFET Behavior. _g9.2. _tImproved Models for Short-Channel MOSFETs. _g9.3. _tDevices: Complementary MOSFETs - CMOS. _g9.4. _tLooking Ahead -- _g10. _tMOS Field-Effect Transistors II: High-Field Effects. _g10.1. _tElectric Fields in the Velocity-Saturation Region. _g10.2. _tSubstrate Current. _g10.3. _tGate Current. _g10.4. _tDevice Degradation. _g10.5. _tDevices: MOS Nonvolatile Memory Structures. |
588 | _aMachine converted from AACR2 source record. | ||
650 | 0 |
_aSemiconductors. _9323821 |
|
650 | 0 |
_aIntegrated circuits _9319425 |
|
700 | 1 |
_aKamins, Theodore I., _eauthor. _9235057 |
|
700 | 1 |
_aChan, Mansun, _eauthor. _91019134 |
|
907 |
_a.b10199500 _b03-10-17 _c27-10-15 |
||
942 | _cB | ||
945 |
_a621.38152 MUL _g1 _iA410731B _j0 _lcmain _o- _p$207.25 _q- _r- _s- _t0 _u5 _v1 _w0 _x1 _y.i10479703 _z28-10-15 |
||
998 |
_a(2)b _a(2)c _b06-04-16 _cm _da _feng _gnyu _h0 |
||
999 |
_c1110511 _d1110511 |