TY  - BOOK
AU  - Baliga,B.Jayant
TI  - Advanced high voltage power device concepts
SN  - 1461402689
AV  - TK7872.R35 B35 2011
U1  - 621.3815287 23
PY  - 2011///]
CY  - [New York (State)]
PB  - Springer
KW  - Silicon-controlled rectifiers
KW  - Solid state electronics
KW  - Power semiconductors
N1  - Includes bibliographical references and index; 1. Introduction -- 2. Silicon Thyristors -- 3. Silicon Carbide Thyristors -- 4. Silicon GTO -- 5. Silicon IGBT (Insulated Gate Bipolar Transistor) -- 6. Si C Planar MOSFET Structures -- 7. Silicon Carbide IGBT -- 8. Silicon MCT -- 9. Silicon BRT -- 10. Silicon EST -- 11. Synopsis -- --; 1.1; Typical Power Switching Waveforms --; 1.2; Typical High Voltage Power Device Structures --; 1.3; Revised Breakdown Models for Silicon --; 1.4; Typical High Voltage Applications --; 1.4.1; Variable-Frequency Motor Drive --; 1.4.2; High Voltage Direct Current (HVDC) Power Transmission and Distribution --; 1.5; Conclusions --; 2.1; Power Thyristor Structure and Operation --; 2.2; 5,000-V Silicon Thyristor --; 2.2.1; Blocking Characteristics --; 2.2.2; On-State Characteristics --; 2.2.3; Turn-On --; 2.2.4; Reverse Recovery --; 2.2.5; Summary --; 2.3; 10,000-V Silicon Thyristor --; 2.3.1; Blocking Characteristics --; 2.3.2; On-State Characteristics --; 2.3.3; Turn-On --; 2.3.4; Reverse Recovery --; 2.3.5; Summary --; 2.4; Conclusions --; 3.1; Si C Thyristor Structure --; 3.2; 20-k V Silicon Baseline Thyristor --; 3.2.1; Blocking Characteristics --; 3.2.2; On-State Characteristics --; 3.3; 20-k V Silicon Carbide Thyristor --; 3.3.1; Blocking Characteristics --; 3.3.2; On-State Characteristics --; 3.4; Conclusions --; 4.1; Basic Structure and Operation --; 4.2; 5,000-V Silicon GTO --; 4.2.1; Blocking Characteristics --; 4.2.2; Leakage Current --; 4.2.3; On-State Voltage Drop --; 4.2.4; Turn-Off Characteristics --; 4.2.5; Lifetime Dependence --; 4.2.6; Switching Energy Loss --; 4.2.7; Maximum Operating Frequency --; 4.2.8; Turn-Off Gain --; 4.2.9; Buffer Layer Doping --; 4.2.10; Transparent Emitter Structure --; 4.3; 10,000-V Silicon GTO --; 4.3.1; Blocking Characteristics --; 4.3.2; On-State Voltage Drop --; 4.3.3; Turn-Off Characteristics --; 4.3.4; Switching Energy Loss --; 4.3.5; Maximum Operating Frequency --; 4.3.6; Turn-Off Gain --; 4.4; Reverse-Biased Safe Operating Area --; 4.5; Conclusions --; 5.1; Basic Structure and Operation --; 5.2; 5,000-V Silicon Trench-Gate IGBT --; 5.2.1; Blocking Characteristics --; 5.2.2; Leakage Current --; 5.2.3; On-State Voltage Drop --; 5.2.4; Turn-Off Characteristics --; 5.2.5; Lifetime Dependence --; 5.2.6; Switching Energy Loss --; 5.2.7; Maximum Operating Frequency --; 5.2.8; Buffer Layer Doping --; 5.2.9; Transparent Emitter Structure --; 5.3; 5,000-V Silicon Planar-Gate IGBT --; 5.3.1; Blocking Characteristics --; 5.3.2; On-State Voltage Drop --; 5.3.3; Turn-Off Characteristics --; 5.3.4; Lifetime Dependence --; 5.3.5; Switching Energy Loss --; 5.3.6; Maximum Operating Frequency --; 5.4; 10,000-V Silicon IGBT --; 5.4.1; Blocking Characteristics --; 5.4.2; On-State Voltage Drop --; 5.4.3; Turn-Off Characteristics --; 5.4.4; Switching Energy Loss --; 5.4.5; Maximum Operating Frequency --; 5.5; Forward Biased Safe Operation Area --; 5.6; Reverse Biased Safe Operation Area --; 5.7; Conclusions --; 6.1; Shielded Planar Inversion-Mode MOSFET Structure --; 6.2; Blocking Mode --; 6.3; Threshold Voltage --; 6.4; On-State Resistance --; 6.4.1; Channel-Resistance --; 6.4.2; Accumulation-Resistance --; 6.4.3; JFET-Resistance --; 6.4.4; Drift-Resistance --; 6.4.5; Total On-Resistance --; 6.5; Capacitances --; 6.6; Inductive Load Turn-Off Characteristics --; 6.7; 5-k V Inversion-Mode MOSFET --; 6.7.1; Blocking Characteristics --; 6.7.2; On-Resistance --; 6.7.3; Device Capacitances --; 6.7.4; Inductive Load Turn-Off Characteristics --; 6.7.5; Switching Energy Loss --; 6.7.6; Maximum Operating Frequency --; 6.8; 10-k V Inversion-Mode MOSFET --; 6.8.1; Blocking Characteristics --; 6.8.2; On-Resistance --; 6.8.3; Inductive Load Turn-Off Characteristics --; 6.8.4; Switching Energy Loss --; 6.8.5; Maximum Operating Frequency --; 6.9; 20-k V Inversion-Mode MOSFET --; 6.9.1; Blocking Characteristics --; 6.9.2; On-Resistance --; 6.9.3; Inductive Load Turn-Off Characteristics --; 6.9.4; Switching Energy Loss --; 6.9.5; Maximum Operating Frequency --; 6.10; Conclusions --; 7.1; n-Channel Asymmetric Structure --; 7.1.1; Blocking Characteristics --; 7.1.2; On-State Voltage Drop --; 7.1.3; Turn-Off Characteristics --; 7.1.4; Lifetime Dependence --; 7.1.5; Switching Energy Loss --; 7.1.6; Maximum Operating Frequency --; 7.2; Optimized n-Channel Asymmetric Structure --; 7.2.1; Structure Optimization --; 7.2.2; Blocking Characteristics --; 7.2.3; On-State Voltage Drop --; 7.2.4; Turn-Off Characteristics --; 7.2.5; Lifetime Dependence --; 7.2.6; Switching Energy Loss --; 7.2.7; Maximum Operating Frequency --; 7.3; p-Channel Asymmetric Structure --; 7.3.1; Blocking Characteristics --; 7.3.2; On-State Voltage Drop --; 7.3.3; Turn-Off Characteristics --; 7.3.4; Lifetime Dependence --; 7.3.5; Switching Energy Loss --; 7.3.6; Maximum Operating Frequency --; 7.4; Conclusions --; 8.1; Basic Structure and Operation --; 8.2; 5,000-V Silicon MCT --; 8.2.1; Blocking Characteristics --; 8.2.2; On-State Voltage Drop --; 8.2.3; Turn-Off Characteristics --; 8.2.4; Lifetime Dependence --; 8.2.5; Switching Energy Loss --; 8.2.6; Maximum Operating Frequency --; 8.3; 10,000-V Silicon MCT --; 8.3.1; Blocking Characteristics --; 8.3.2; On-State Voltage Drop --; 8.3.3; Turn-Off Characteristics --; 8.3.4; Switching Energy Loss --; 8.3.5; Maximum Operating Frequency --; 8.4; Forward-Biased Safe Operating Area --; 8.5; Reverse-Biased Safe Operating Area --; 8.6; Conclusions --; 9.1; Basic Structure and Operation --; 9.2; 5,000-V Silicon BRT --; 9.2.1; Blocking Characteristics --; 9.2.2; On-State Voltage Drop --; 9.2.3; Turn-Off Characteristics --; 9.2.4; Lifetime Dependence --; 9.2.5; Switching Energy Loss --; 9.2.6; Maximum Operating Frequency --; 9.3; Alternate Structure and Operation --; 9.3.1; Blocking Characteristics --; 9.3.2; On-State Voltage Drop --; 9.3.3; Turn-Off Characteristics --; 9.4; 10,000-V Silicon BRT --; 9.4.1; Blocking Characteristics --; 9.4.2; On-State Voltage Drop --; 9.4.3; Turn-Off Characteristics --; 9.4.4; Switching Energy Loss --; 9.4.5; Maximum Operating Frequency --; 9.5; Forward-Biased Safe Operating Area --; 9.6; Reverse-Biased Safe Operating Area --; 9.7; Conclusions --; 10.1; Basic Structure and Operation --; 10.2; 5,000-V Silicon SC-EST --; 10.2.1; Blocking Characteristics --; 10.2.2; On-State Voltage Drop --; 10.2.3; Turn-Off Characteristics --; 10.2.4; Lifetime Dependence --; 10.2.5; Switching Energy Loss --; 10.2.6; Maximum Operating Frequency --; 10.2.7; Forward-Biased Safe Operating Area --; 10.3; 5,000-V Silicon DC-EST --; 10.3.1; Blocking Characteristics --; 10.3.2; On-State Voltage Drop --; 10.3.3; Turn-Off Characteristics --; 10.3.4; Lifetime Dependence --; 10.3.5; Switching Energy Loss --; 10.3.6; Maximum Operating Frequency --; 10.3.7; Forward-Biased Safe Operating Area --; 10.4; 10,000-V Silicon EST --; 10.4.1; Blocking Characteristics --; 10.4.2; On-State Voltage Drop --; 10.4.3; Turn-Off Characteristics --; 10.4.4; Switching Energy Loss --; 10.4.5; Maximum Operating Frequency --; 10.5; Reverse-Biased Safe Operation Area --; 10.6; Conclusions --; 11.1; 5-k V Devices --; 11.1.1; On-State Voltage Drop --; 11.1.2; Power-Loss Trade-off Curves --; 11.1.3; Forward-Biased Safe Operating Area --; 11.1.4; Reverse-Biased Safe Operating Area --; 11.2; 10-k V Devices --; 11.2.1; On-State Voltage Drop --; 11.2.2; Turn-Off Losses --; 11.2.3; Maximum Operating Frequency --; 11.3; Conclusions
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