Baliga, B. Jayant, 1948-

Advanced high voltage power device concepts / B. Jayant Baliga. - xvi, 568 pages : illustrations ; 24 cm

Includes bibliographical references and index.

1. Introduction -- 2. Silicon Thyristors -- 3. Silicon Carbide Thyristors -- 4. Silicon GTO -- 5. Silicon IGBT (Insulated Gate Bipolar Transistor) -- 6. Si C Planar MOSFET Structures -- 7. Silicon Carbide IGBT -- 8. Silicon MCT -- 9. Silicon BRT -- 10. Silicon EST -- 11. Synopsis -- -- Typical Power Switching Waveforms -- Typical High Voltage Power Device Structures -- Revised Breakdown Models for Silicon -- Typical High Voltage Applications -- Variable-Frequency Motor Drive -- High Voltage Direct Current (HVDC) Power Transmission and Distribution -- Conclusions -- Power Thyristor Structure and Operation -- 5,000-V Silicon Thyristor -- Blocking Characteristics -- On-State Characteristics -- Turn-On -- Reverse Recovery -- Summary -- 10,000-V Silicon Thyristor -- Blocking Characteristics -- On-State Characteristics -- Turn-On -- Reverse Recovery -- Summary -- Conclusions -- Si C Thyristor Structure -- 20-k V Silicon Baseline Thyristor -- Blocking Characteristics -- On-State Characteristics -- 20-k V Silicon Carbide Thyristor -- Blocking Characteristics -- On-State Characteristics -- Conclusions -- Basic Structure and Operation -- 5,000-V Silicon GTO -- Blocking Characteristics -- Leakage Current -- On-State Voltage Drop -- Turn-Off Characteristics -- Lifetime Dependence -- Switching Energy Loss -- Maximum Operating Frequency -- Turn-Off Gain -- Buffer Layer Doping -- Transparent Emitter Structure -- 10,000-V Silicon GTO -- Blocking Characteristics -- On-State Voltage Drop -- Turn-Off Characteristics -- Switching Energy Loss -- Maximum Operating Frequency -- Turn-Off Gain -- Reverse-Biased Safe Operating Area -- Conclusions -- Basic Structure and Operation -- 5,000-V Silicon Trench-Gate IGBT -- Blocking Characteristics -- Leakage Current -- On-State Voltage Drop -- Turn-Off Characteristics -- Lifetime Dependence -- Switching Energy Loss -- Maximum Operating Frequency -- Buffer Layer Doping -- Transparent Emitter Structure -- 5,000-V Silicon Planar-Gate IGBT -- Blocking Characteristics -- On-State Voltage Drop -- Turn-Off Characteristics -- Lifetime Dependence -- Switching Energy Loss -- Maximum Operating Frequency -- 10,000-V Silicon IGBT -- Blocking Characteristics -- On-State Voltage Drop -- Turn-Off Characteristics -- Switching Energy Loss -- Maximum Operating Frequency -- Forward Biased Safe Operation Area -- Reverse Biased Safe Operation Area -- Conclusions -- Shielded Planar Inversion-Mode MOSFET Structure -- Blocking Mode -- Threshold Voltage -- On-State Resistance -- Channel-Resistance -- Accumulation-Resistance -- JFET-Resistance -- Drift-Resistance -- Total On-Resistance -- Capacitances -- Inductive Load Turn-Off Characteristics -- 5-k V Inversion-Mode MOSFET -- Blocking Characteristics -- On-Resistance -- Device Capacitances -- Inductive Load Turn-Off Characteristics -- Switching Energy Loss -- Maximum Operating Frequency -- 10-k V Inversion-Mode MOSFET -- Blocking Characteristics -- On-Resistance -- Inductive Load Turn-Off Characteristics -- Switching Energy Loss -- Maximum Operating Frequency -- 20-k V Inversion-Mode MOSFET -- Blocking Characteristics -- On-Resistance -- Inductive Load Turn-Off Characteristics -- Switching Energy Loss -- Maximum Operating Frequency -- Conclusions -- n-Channel Asymmetric Structure -- Blocking Characteristics -- On-State Voltage Drop -- Turn-Off Characteristics -- Lifetime Dependence -- Switching Energy Loss -- Maximum Operating Frequency -- Optimized n-Channel Asymmetric Structure -- Structure Optimization -- Blocking Characteristics -- On-State Voltage Drop -- Turn-Off Characteristics -- Lifetime Dependence -- Switching Energy Loss -- Maximum Operating Frequency -- p-Channel Asymmetric Structure -- Blocking Characteristics -- On-State Voltage Drop -- Turn-Off Characteristics -- Lifetime Dependence -- Switching Energy Loss -- Maximum Operating Frequency -- Conclusions -- Basic Structure and Operation -- 5,000-V Silicon MCT -- Blocking Characteristics -- On-State Voltage Drop -- Turn-Off Characteristics -- Lifetime Dependence -- Switching Energy Loss -- Maximum Operating Frequency -- 10,000-V Silicon MCT -- Blocking Characteristics -- On-State Voltage Drop -- Turn-Off Characteristics -- Switching Energy Loss -- Maximum Operating Frequency -- Forward-Biased Safe Operating Area -- Reverse-Biased Safe Operating Area -- Conclusions -- Basic Structure and Operation -- 5,000-V Silicon BRT -- Blocking Characteristics -- On-State Voltage Drop -- Turn-Off Characteristics -- Lifetime Dependence -- Switching Energy Loss -- Maximum Operating Frequency -- Alternate Structure and Operation -- Blocking Characteristics -- On-State Voltage Drop -- Turn-Off Characteristics -- 10,000-V Silicon BRT -- Blocking Characteristics -- On-State Voltage Drop -- Turn-Off Characteristics -- Switching Energy Loss -- Maximum Operating Frequency -- Forward-Biased Safe Operating Area -- Reverse-Biased Safe Operating Area -- Conclusions -- Basic Structure and Operation -- 5,000-V Silicon SC-EST -- Blocking Characteristics -- On-State Voltage Drop -- Turn-Off Characteristics -- Lifetime Dependence -- Switching Energy Loss -- Maximum Operating Frequency -- Forward-Biased Safe Operating Area -- 5,000-V Silicon DC-EST -- Blocking Characteristics -- On-State Voltage Drop -- Turn-Off Characteristics -- Lifetime Dependence -- Switching Energy Loss -- Maximum Operating Frequency -- Forward-Biased Safe Operating Area -- 10,000-V Silicon EST -- Blocking Characteristics -- On-State Voltage Drop -- Turn-Off Characteristics -- Switching Energy Loss -- Maximum Operating Frequency -- Reverse-Biased Safe Operation Area -- Conclusions -- 5-k V Devices -- On-State Voltage Drop -- Power-Loss Trade-off Curves -- Forward-Biased Safe Operating Area -- Reverse-Biased Safe Operating Area -- 10-k V Devices -- On-State Voltage Drop -- Turn-Off Losses -- Maximum Operating Frequency -- Conclusions. 1.1. 1.2. 1.3. 1.4. 1.4.1. 1.4.2. 1.5. 2.1. 2.2. 2.2.1. 2.2.2. 2.2.3. 2.2.4. 2.2.5. 2.3. 2.3.1. 2.3.2. 2.3.3. 2.3.4. 2.3.5. 2.4. 3.1. 3.2. 3.2.1. 3.2.2. 3.3. 3.3.1. 3.3.2. 3.4. 4.1. 4.2. 4.2.1. 4.2.2. 4.2.3. 4.2.4. 4.2.5. 4.2.6. 4.2.7. 4.2.8. 4.2.9. 4.2.10. 4.3. 4.3.1. 4.3.2. 4.3.3. 4.3.4. 4.3.5. 4.3.6. 4.4. 4.5. 5.1. 5.2. 5.2.1. 5.2.2. 5.2.3. 5.2.4. 5.2.5. 5.2.6. 5.2.7. 5.2.8. 5.2.9. 5.3. 5.3.1. 5.3.2. 5.3.3. 5.3.4. 5.3.5. 5.3.6. 5.4. 5.4.1. 5.4.2. 5.4.3. 5.4.4. 5.4.5. 5.5. 5.6. 5.7. 6.1. 6.2. 6.3. 6.4. 6.4.1. 6.4.2. 6.4.3. 6.4.4. 6.4.5. 6.5. 6.6. 6.7. 6.7.1. 6.7.2. 6.7.3. 6.7.4. 6.7.5. 6.7.6. 6.8. 6.8.1. 6.8.2. 6.8.3. 6.8.4. 6.8.5. 6.9. 6.9.1. 6.9.2. 6.9.3. 6.9.4. 6.9.5. 6.10. 7.1. 7.1.1. 7.1.2. 7.1.3. 7.1.4. 7.1.5. 7.1.6. 7.2. 7.2.1. 7.2.2. 7.2.3. 7.2.4. 7.2.5. 7.2.6. 7.2.7. 7.3. 7.3.1. 7.3.2. 7.3.3. 7.3.4. 7.3.5. 7.3.6. 7.4. 8.1. 8.2. 8.2.1. 8.2.2. 8.2.3. 8.2.4. 8.2.5. 8.2.6. 8.3. 8.3.1. 8.3.2. 8.3.3. 8.3.4. 8.3.5. 8.4. 8.5. 8.6. 9.1. 9.2. 9.2.1. 9.2.2. 9.2.3. 9.2.4. 9.2.5. 9.2.6. 9.3. 9.3.1. 9.3.2. 9.3.3. 9.4. 9.4.1. 9.4.2. 9.4.3. 9.4.4. 9.4.5. 9.5. 9.6. 9.7. 10.1. 10.2. 10.2.1. 10.2.2. 10.2.3. 10.2.4. 10.2.5. 10.2.6. 10.2.7. 10.3. 10.3.1. 10.3.2. 10.3.3. 10.3.4. 10.3.5. 10.3.6. 10.3.7. 10.4. 10.4.1. 10.4.2. 10.4.3. 10.4.4. 10.4.5. 10.5. 10.6. 11.1. 11.1.1. 11.1.2. 11.1.3. 11.1.4. 11.2. 11.2.1. 11.2.2. 11.2.3. 11.3.

ISBN: 1461402689 9781461402688

LCCN: 2011932228

Subjects--Topical Terms:
Silicon-controlled rectifiers.
Solid state electronics.
Power semiconductors.

LC Class. No.: TK7872.R35 / B35 2011

Dewey Class. No.: 621.3815287